Characterization of surface recombination velocity of InP reduced by sulfur-treatment and a phosphorous-nitride film formation with Raman spectroscopy

Surface recombination velocity of InP was reduced by the process including surface treatment using (NH/sub 4/)/sub 2/S/sub x/ solution (sulfur-treatment), annealing in vacuum and formation of a phosphorous-nitride (PN) film by photon-assisted chemical vapor deposition (PA-CVD). The minimum value of surface recombination velocity was 4.1-4.8/spl times/10/sup 3/ (cm/s). Laser Raman spectroscopy was used for characterizing surface recombination velocity.