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Characterization of surface recombination velocity of InP reduced by sulfur-treatment and a phosphorous-nitride film formation with Raman spectroscopy

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4 Author(s)
Hanajiri, T. ; Dept. of Electr. & Electron. Eng., Toyo Univ., Saitama, Japan ; Matsumoto, Y. ; Sugano, T. ; Katoda, T.

Surface recombination velocity of InP was reduced by the process including surface treatment using (NH4)2Sx solution (sulfur-treatment), annealing in vacuum and formation of a phosphorous-nitride (PN) film by photon-assisted chemical vapor deposition (PA-CVD). The minimum value of surface recombination velocity was 4.1-4.8×103 (cm/s). Laser Raman spectroscopy was used for characterizing surface recombination velocity

Published in:

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Date of Conference:

9-13 May 1995