Highly controlled InGaAs(P)/InP MQW interfaces grown by MOVPE using TBA and TBP precursors

Reports that abrupt InGaAs/InP MQW interfaces are realized over 2-inch wafers by employing tertiarybutylarsine (TEA) and tertiarybutylphosphine (TBP) in place of AsH/sub 3/ and PH/sub 3/, owing to elimination of the arsenic contamination into the InP layer after InGaAs growth and suppression of the As-P exchange reaction at the interfaces.