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Highly controlled InGaAs(P)/InP MQW interfaces grown by MOVPE using TBA and TBP precursors

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5 Author(s)
Nakamura, T. ; Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan ; Ae, S. ; Terakado, T. ; Torikai, T.
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Reports that abrupt InGaAs/InP MQW interfaces are realized over 2-inch wafers by employing tertiarybutylarsine (TEA) and tertiarybutylphosphine (TBP) in place of AsH3 and PH3 , owing to elimination of the arsenic contamination into the InP layer after InGaAs growth and suppression of the As-P exchange reaction at the interfaces

Published in:

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Date of Conference:

9-13 May 1995