By Topic

InAsP/InGaP all ternary strain-compensated multiple quantum wells and its application to long wavelength lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Yokouchi, N. ; R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan ; Yamanaka, N. ; Iwai, N. ; Matsuda, T.
more authors

By newly introducing InGaP tensile strained layer as barriers of InAsP compressively strained multiple quantum wells, a high crystalline quality of InAsP/InGaP strain-compensated multiple quantum wells was obtained using metalorganic chemical vapor deposition on (100) InP substrate. Strain compensation was clearly confirmed by the surface morphology, double crystal X-ray measurement and photoluminescence spectrum. A first laser consisting of an all ternary quantum well active layer was successfully fabricated. The threshold current density of 1 kA/cm2 was obtained, cavity length of 600 μm, without the use of a separate confinement heterostructure layer. A very low threshold current density of 300 A/cm2 was achieved in an improved structure emitting at 1.3 μm

Published in:

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Date of Conference:

9-13 May 1995