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Multicomponent zone melting growth of ternary InGaAs bulk crystal

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4 Author(s)
Suzuki, T. ; Fujitsu Labs. Ltd., Atsugi, Japan ; Kusunoki, T. ; Katoh, T. ; Nakajima, K.

A 13 mm thick InxGa1-xAs crystal with n=0.14 has been successfully grown by a method of multicomponent zone melting growth. The alloy composition gradually changes along the growth direction, and this change is well explained by a temperature profile. A good uniformity in the alloy composition along the direction normal to the growth was also achieved

Published in:
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Date of Conference: 9-13 May 1995

Page(s):
45 - 48
Meeting Date :
09 May 1995-13 May 1995
Print ISBN:
0-7803-2147-2
INSPEC Accession Number:
5161318
Conference Location :
Hokkaido
Digital Object Identifier :
10.1109/ICIPRM.1995.522072
Product Type:
Conference Publications

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