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Effect of (GaP)m/(InP)m short period binary superlattice period on quantum wire formation by strain induced lateral layer ordering in GaInP/AlInP multi-quantum-wire lasers

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4 Author(s)
J. Yoshida ; Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan ; A. Kikuchi ; I. Nomura ; K. Kishino

Optical anisotropy of the GaInP/AlInP compressively strained multi-quantum wire lasers fabricated by the strain induced lateral layer ordering process in (GaP)m(InP)m short period binary superlattice layers, which is a very effective method to fabricate GaInP/AlInP compressively strained quantum wire lasers through gas source molecular beam epitaxy, was investigated systematically by changing (GaP)m/(InP), superlattice period (i.e. monolayer number m). A drastic reduction in threshold current density (Jth ) was obtained at m of 1.5 and anisotropic lasing characteristics were intensified with increasing m values. Moreover the low Jth value of 278A/cm2 was obtained at m of 1.5 ML with a cavity length of 794 μm

Published in:

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Date of Conference:

9-13 May 1995