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An efficient MOSFET current model for analog circuit simulation-subthreshold to strong inversion

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1 Author(s)
Dunlop, L. ; IBM Gen. Technol. Div., Essex Junction, VT, USA

An analytical model for the subthreshold current of MOSFETs is derived. The model is valid for gate voltages from above the onset of weak inversion to the onset of strong inversion. A complete drain current model is formulated by merging the subthreshold model with a conventional strong inversion model so that, at the transition between weak and strong inversion, continuity of the drain current and its derivatives is maintained

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:25 ,  Issue: 2 )

Date of Publication:

Apr 1990

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