An efficient MOSFET current model for analog circuit simulation-subthreshold to strong inversion

An analytical model for the subthreshold current of MOSFETs is derived. The model is valid for gate voltages from above the onset of weak inversion to the onset of strong inversion. A complete drain current model is formulated by merging the subthreshold model with a conventional strong inversion model so that, at the transition between weak and strong inversion, continuity of the drain current and its derivatives is maintained.<
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