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Improved surface plasmon coupling with an InGaN/GaN quantum well for more effective emission enhancement

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9 Author(s)
Lu, Yen-Cheng ; Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan ; Tsai, Fu-Ji ; Wang, Jyh-Yang ; Lin, Cheng-Hung
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With a dielectric layer between metal and semiconductor for generating surface plasmon, the dissipation rate of metal is reduced and the evanescent-field range is increased such that surface plasmon coupling leads to stronger emission enhancement.

Published in:
OptoElectronics and Communications Conference, 2009. OECC 2009. 14th

Date of Conference: 13-17 July 2009

Page(s):
1 - 2
E-ISBN :
978-1-4244-4103-7
Print ISBN:
978-1-4244-4102-0
INSPEC Accession Number:
10846246
Conference Location :
Hong Kong
Digital Object Identifier :
10.1109/OECC.2009.5218178
Product Type:
Conference Publications

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