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Status of diffused junction p+n InP solar cells for space power applications

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11 Author(s)
Faur, M. ; Dept. of Electr. Eng., Cleveland State Univ., OH, USA ; Faur, M. ; Flood, D.J. ; Goradia, C.
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We have succeeded in fabricating diffused junction p+n(Cd,S) InP solar cells with measured AM0, 25°C open circuit voltage (Voc) of 890 mV, which, to the best of our knowledge, is higher than previously reported Voc values for any InP homojunction solar cells. The experiment-based projected achievable maximum AM0, 25°C efficiency of these cells, using LEC grown substrates, is 21.3%. The maximum AM0, 25°C efficiency recorded to date on bare cells is, however, only 13.2% due entirely to nonoptimized front grid, antireflection (AR) coating and emitter thickness. This paper summarizes advances in the technology of fabrication of p+n InP diffused structures and solar cells, undertaken in an effort to increase the cell efficiency. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications

Published in:

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on  (Volume:2 )

Date of Conference:

5-9 Dec 1994