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Material quality and dislocation trapping in hydrogen passivated heteroepitaxial InP/GaAs and InP/Ge solar cells

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5 Author(s)
Ringel, S.A. ; Electron. Mater. & Devices Lab., Ohio State Univ., Columbus, OH, USA ; Chatterjee, B. ; Sieg, R.M. ; Schnetzer, E.V.
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Plasma hydrogenation has recently been demonstrated to be highly effective in passivating dislocations in heteroepitaxial InP and is a promising technique for achieving viable heteroepitaxial InP solar cells. In this paper, the effects of hydrogen on the fundamental properties of three dislocation related hole traps in heteroepitaxial InP/GaAs are presented. Hydrogen passivation significantly alters the dislocation trapping kinetics, causing point defect-like behavior consistent with a transformation from dislocation-related defect bands within the InP bandgap to a low concentration of individual deep levels after hydrogenation. Furthermore, hydrogen passivation is shown to shift the dominant space charge generation center from Ec-0.71 eV to Ec-0.92 eV, away from midgap. A model is proposed which explains these effects on the basis of decreased electronic interaction between dislocation sites. Finally, a comparison of InP material quality grown on GaAs, Ge and GaAs/Ge substrates is presented, and hydrogen passivation of InP/GaAs/Ge structures is reported

Published in:

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on  (Volume:2 )

Date of Conference:

5-9 Dec 1994

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