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100 ps precessional spin-transfer switching of a planar magnetic random access memory cell with perpendicular spin polarizer

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9 Author(s)
Papusoi, C. ; INAC/SPINTEC, CEA, 17 rue des Martyrs, 38054 Grenoble, France ; Delaet, B. ; Rodmacq, B. ; Houssameddine, D.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3206919 

Ultrafast spin-transfer precessional switching between two stable states of a magnetic random access memory device is demonstrated in structures comprising a perpendicularly magnetized polarizing layer (PL), an in-plane magnetized free layer (FL), and an in-plane magnetized analyzing layer (AL) in a PL/spacer/FL/spacer/AL stack. Back and forth switching can be achieved with sub-ns current pulses of the same polarity. The spin-torque influence from the analyzer leads to an asymmetric dependence of the switching properties as a function of the current sign and initial state.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 7 )

Date of Publication:

Aug 2009

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