A 10-Gbit/s, 1.58-mu m, InGaAlAs electroabsorption modulator (EAM) integrated distributed-feedback (DFB) laser (EML) with a twin waveguide (TWG) structure is operated experimentally over a wide temperature range of 0 to 80degC. We introduce an InGaAlAs multi-quantum well (MQW) system for both LD and EAM MQWs, because this material has temperature-tolerant characteristics. These layers are grown using single step epitaxial growth, and the device was fabricated with a very simple process. Moreover, successful transmission through an 80-km single-mode fiber (SMF) was achieved with the device running at up to 80degC. These results confirm the suitability of this type of laser for use as a cost-effective and low-power consumption light source in 10-Gbit/s optical network systems.
Published in:
Lightwave Technology, Journal of
(Volume:27
,
Issue:
22
)
Date of Publication:
Nov.15, 2009
- Page(s):
-
5084
-
5089
- ISSN :
-
0733-8724
- INSPEC Accession Number:
-
10890530
- Digital Object Identifier :
-
10.1109/JLT.2009.2030516
- Product Type:
-
Journals & Magazines
- Date of Publication :
-
21 August 2009
- Date of Current Version :
-
25 September 2009
- Issue Date :
-
Nov.15, 2009
- Sponsored by :
-
IEEE Aerospace and Electronic Systems Society