By Topic

A low thermal budget, fully self-aligned lateral BJT on thin film SOI substrate for low power BiCMOS applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
V. M. C. Chen ; Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA ; J. C. S. Woo

A novel SDE LBJT on TFSOI substrate has been demonstrated. The fabrication process is self-aligned, with a minimum thermal budget, and is fully compatible with an SOI CMOS process. Good electrical results were obtained. The devices are expected to have good current drive and high frequency performance for low power applications.

Published in:

VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on

Date of Conference:

6-8 June 1995