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Extending gate dielectric scaling limit by use of nitride or oxynitride

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8 Author(s)
Wang, X.W. ; Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA ; Shi, Y. ; Ma, T.P. ; Cui, G.J.
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Theoretical calculations indicate that the tunneling currents in silicon nitride or oxynitride are greatly reduced compared to those in SiO/sub 2/ for equivalent oxide thicknesses (EOT) below 4 nm. Experimental results obtained on Jet Vapor Deposited (JVD) nitrides/oxynitrides are shown to verify the theoretical trend. These results suggest that extending the scaling limit well below 4 nm of EOT is possible with the JVD nitride.

Published in:

VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on

Date of Conference:

6-8 June 1995