Referenced Items are not available for this document.
Diamond is a promising material for high-power and low-loss semiconductor devices. However, the reported reverse blocking electric field of diamond-based power devices is as low as 2 MV/cm, and their performance is worse than ideal. We have developed reach-through-type Schottky barrier diodes (SBDs) with various Schottky barrier heights (SBHs) by changing metals. SBDs with high SBH show low leakage current and high operation limit of 3.1 MV/cm. This indicates that the reverse operation limit of diamond SBDs is determined not by leakage through defects but by carrier transport through the barrier. Reduction of specific on-resistance increases Baliga's figure of merit to 51 MW/cm2, which is tenfold higher than the Si limit.
Published in:
Electron Device Letters, IEEE
(Volume:30
,
Issue:
9
)
Date of Publication: Sept. 2009
- Page(s):
- 960 - 962
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 10841638
- Digital Object Identifier :
- 10.1109/LED.2009.2026439
- Product Type:
- Journals & Magazines
- Date of Publication :
- 18 August 2009
- Date of Current Version :
- 25 August 2009
- Issue Date :
- Sept. 2009
- Sponsored by :
- IEEE Electron Devices Society
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