By Topic

Post-CMOS Compatible Micromachining Technique for On-Chip Passive RF Filter Circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Zhengzheng Wu ; State Key Lab. of Transducer Technol., Chinese Acad. of Sci., Shanghai, China ; Lei Gu ; Xinxin Li

This paper reports on a post-CMOS compatible micromachining technology for passive RF circuit integration. The micromachining technology combines the formation of high performance microelectromechanical systems solenoid inductors and metal-insulator-metal (MIM) capacitors by using a post CMOS process on standard CMOS substrate. Utilizing this process, novel on-chip 3-D configured RF filters for 5 GHz band are integrated on-chip. Two types of compact filters are designed and fabricated, with the layout size of the bandpass filter as 0.65 times 0.67 mm2 and that of the low-pass filter as 0.77 times 1.25 mm2. From the measurement results, the fifth-order low-pass filter shows less than 1.06 dB insertion loss up to 5 GHz and -1.5 dB cutoff frequency at 5.3 GHz. The bandpass filter is a secondorder coupled-resonator type, with measured 4.3 dB minimum insertion loss and better than 13 dB return loss in the pass band. Both simulation and shock testing results have shown that the filters are almost free of influence from environmental vibration and shock. From the measured results in various temperatures, the bandpass filters were found to show lower loss under low temperatures, while the passband shift is negligible in the various temperatures. Together with the fabricated filters, the developed micromachining technique has demonstrated the potential of onchip integration and miniaturization of passive RF circuits.

Published in:

Components and Packaging Technologies, IEEE Transactions on  (Volume:32 ,  Issue: 4 )