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High-resistivity GaN homoepitaxial layer studied by Schottky diode structure

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5 Author(s)
Shi, H. ; Dept. of Phys., Nanjing Univ., Nanjing, China ; Lu, H. ; Chen, D. ; Zhang, R.
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An undoped GaN homoepitaxial layer has been grown by metal-organic chemical vapour deposition on a conductive free-standing bulk GaN substrate. The dislocation density of the homoepitaxial layer characterised by cathodoluminescence mapping technique is about 6 times 106 cm-2. By fabricating a vertical Schottky diode structure, the resistivity of the homoepitaxial layer is estimated in the order of 109 cm at room temperature. This study indicates that highly-resistive GaN can be produced by a homoepitaxy approach.

Published in:

Electronics Letters  (Volume:45 ,  Issue: 17 )

Date of Publication:

Aug. 13 2009

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