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Browse Journals & Magazines > Applied Physics Letters ...> Volume:95 Issue:6 Help

Controllable resistance switching behavior of NiO/SiO2 double layers for nonvolatile memory applications

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3 Author(s)
Choi, Ji-Hyuk ; Department of Materials Science and Engineering, Information and Electronic Materials Research Laboratory, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Republic of Korea ; Das, Sachindra Nath ; Jae-Min Myoung

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Resistive switching characteristics of the double layer (NiO/SiO2) were studied for possible nonvolatile memory applications. The effect of SiO2 thickness variation in the memory device was investigated. A repeatable resistance switching behavior was observed with on/off ratio 105. The operation voltage of the device depended on the thickness of SiO2 layer and it increases with increasing SiO2 thickness. High-resolution transmission electron microscopy analyses revealed that the formation/rapture of Ni filament like percolation path inside SiO2 layer is responsible for the current transport mechanism.

Published in:
Applied Physics Letters  (Volume:95 ,  Issue: 6 )

Date of Publication: Aug 2009

Page(s):
062105 - 062105-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3204450
Product Type:
Journals & Magazines
Date of Current Version :
18 August 2009
Issue Date :
Aug 2009

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