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Kink-free AlInAs/GaInAs/InP HEMTs grown by molecular beam epitaxy

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3 Author(s)
Luo, L.F. ; Dept. of Electr. Eng., Columbia Univ., New York, NY, USA ; Longenbach, K.F. ; Wang, W.I.

Kink-free AlInAs/GaInAs/InP HEMTs have been fabricated from an MBE structure grown under normal growth condition. Devices with 1 mu m gate-length exhibit an extrinsic transconductance of 450 mS/mm and a maximum drain current of 600 mA/mm which represent the best results for 1 mu m gate devices. The DC output conductance shows no kink over the entire gate bias range. The elimination of the kink is attributed to the high quality AlInAs buffer layer and a low mismatch between the AlInAs buffer layer and InP substrate.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 12 )