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Novel pressure sensors with multilayer SOI structures

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4 Author(s)
Chung, G.S. ; Dept. of Electr. & Electron. Eng., Toyohashi Univ. of Technol., Japan ; Kawahito, S. ; Ishida, M. ; Nakamura, T.

A piezoresistive pressure sensor with multilayer SOI structures has been developed. First SOI layers were employed as an etch-stop layer. Double-heteroepitaxially grown second SOI layers were used as an electrically isolated strain gauge. This sensor has the advantages of high sensitivity and high temperature operation.

Published in:

Electronics Letters  (Volume:26 ,  Issue: 12 )

Date of Publication:

7 June 1990

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