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Driving-signal optimization for LDMOS-SOI class E power amplifier efficiency enhancement

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3 Author(s)
Montes, L.A. ; STMicroelectronics S.A., Crolles, France ; Villegas, M. ; Baudoin, G.

A class E power amplifier operating at 3.7 GHz - one of the IEEE802.16e operating frequencies - has been simulated using a LDMOS SOI BSIM3SOI model. Various driving signal waveforms were tested in order to determine which one leads to best class E performances. 87% of drain efficiency and 74% of power added efficiency (PAE) with gain of 8.3 dB was obtained providing a clipped sinus driving signal to the PA, from the best of our knowledge, this is the highest PAE obtained at this frequency using LDMOS transistor.

Published in:
Wireless and Microwave Technology Conference, 2009. WAMICON '09. IEEE 10th Annual

Date of Conference: 20-21 April 2009

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