By Topic

CMOS stress sensor circuits using piezoresistive field-effect transistors (PIFETs)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Jaeger, R.C. ; Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA ; Ramani, R. ; Suhling, J.C. ; Yanling Kang

CMOS analog stress sensor circuits based upon the piezoresistive behavior of MOSFETs are proposed. On the (100) surface, these circuits provide temperature compensated output voltages and currents that are proportional to the inplane normal stress difference (/spl sigma//sub 11//sup -/-/spl sigma//sub 22//sup -/) and the in-plane shear stress /spl sigma//sub 12//sup -/ The circuits offer high sensitivity to stress, highly localized stress measurement and provide direct voltage or current outputs, eliminating the need for tedious /spl Delta/R/R measurements required with more traditional resistor rosettes.

Published in:

VLSI Circuits, 1995. Digest of Technical Papers., 1995 Symposium on

Date of Conference:

8-10 June 1995