By Topic

A current direction sense technique for multi-port SRAMs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Izumikawa, M. ; Microelectron. Res. Labs., NEC Corp., Kanagawa, Japan ; Yamashina, M.

Single-end sense amplifiers which do not require a reference voltage would be most desirable for multi-port SRAMs. This paper describes a current-direction sense circuit which transforms current direction into a logic value. It operates 4 times faster than a CMOS inverter, and with it it is possible to produce single-end 200 MHz 64 Kb SRAMs whose total power consumption is nearly as low as that required for the memory cell currents alone in conventional SRAMs. Also presented is a write bit-line swing control circuit which uses a memory cell replica to reduce bit-line and word-line swing. When this circuit is applied to be used in a 200 MHz 64 Kb SRAM, it is possible to reduce by one-third the power consumption required for bit-line driving and pseudo-read cell current (0.25 /spl mu/m CMOS).

Published in:

VLSI Circuits, 1995. Digest of Technical Papers., 1995 Symposium on

Date of Conference:

8-10 June 1995