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Near infrared inelastic light scattering spectroscopy of high efficiency solar cells device structures based on III-V compounds

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7 Author(s)
Bairamov, B.H. ; A.F. Ioffe Phys.-Tech. Inst., Russia ; Ipatova, I.P. ; Negoduyko, V.K. ; Voitenko, V.A.
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The authors report on the experimental and theoretical study of the near infrared inelastic electronic light scattering of the most promising high-efficiency tandem concentrator solar cells device structures based on nand p-type GaAs, InP, InGaAs, and InGaAsP, grown by LPE. They show that the scattering mechanisms associated with charge-, spin-, and momentum-density fluctuations of free electron gas are represented by different line shapes and occurred in corresponding concentration ranges. A new approach to the problem and observed results provide clear evidence that the sensitivity of the developed measurements in solar cell semiconductor structures provide a unique opportunity for their characterization and optimization

Published in:

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on  (Volume:2 )

Date of Conference:

5-9 Dec 1994

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