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Voltage performance of quantum well solar cells in the Alx Ga1-xAs/GaAs and the GaAs/InyGa1-yAs material systems

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11 Author(s)
Haarpaintner, G. ; Imperial Coll. of Sci., Technol. & Med., London, UK ; Barnes, J. ; Barnham, K.W.J. ; Connolly, J.P.
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The open circuit voltage Voc and reference voltage V ref defined as a measure of the dark current quality, have been studied for a large number of quantum well (QW) solar cells and homogenous control cells. Samples were grown in the AlxGa1-xAs/GaAs and GaAs/InyGa1-y As material systems. For both combinations, QW solar cells show a better voltage performance in Voc and Vref than one would expect from a single bandgap solar cell with the same effective absorption bandgap Ea. For the AlGaAs/GaAs cells, V oc is related to structural parameters of the QW cells such as the well width LW and the Al fraction x. For the strained GaAs/InGaAs cells a relationship is found between Vref and the barrier width LB, which is a dominant parameter in determining strain relaxation and defect formation at a fixed In fraction

Published in:

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on  (Volume:2 )

Date of Conference:

5-9 Dec 1994

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