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A CMOS image sensor with 2.5-e random noise and 110-ke full well capacity using column source follower readout circuits

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5 Author(s)
Kohara, T. ; Graduate School of Engineering, Tohoku University, 6-6-11 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan ; Woonghee Lee ; Akahane, N. ; Mizobuchi, K.
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A low noise CMOS image sensor without degradation of saturation performance has been developed by using column amplifiers of the gains of about 1.0 in a lateral overflow integration capacitor technology. The 1/4-inch, 4.5-µm pitch, 800H × 600V pixels CMOS image sensor fabricated by a 0.18-µm 2P3M technology including a buried pinned photo-diode structure has achieved fully linear response, 0.98 column readout gain, 100-µV/e conversion gain, 2.5-e random noise, 110,000-e full well capacity and 93-dB dynamic range in one exposure.

Published in:

VLSI Circuits, 2009 Symposium on

Date of Conference:

16-18 June 2009