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Ferroelectric(Fe)-NAND flash memory with non-volatile page buffer for data center application enterprise Solid-State Drives (SSD)

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8 Author(s)
Hatanaka, T. ; Dept. of Electrical Engineering and Information Systems, University of Tokyo, Japan ; Yajima, Ryoji ; Horiuchi, Takeshi ; Wang, Shouyu
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A ferroelectric(Fe)-NAND flash memory with a non-volatile (NV) page buffer is proposed. The data fragmentation in a random write is removed by introducing a batch write algorithm. As a result, the SSD performance can double. The NV-page buffer realizes a power outage immune highly reliable operation. With a low program/erase voltage, 6V and a high endurance, 100Million cycles, the proposed Fe-NAND is most suitable for a highly reliable high-speed low power data center application enterprise SSD.

Published in:

VLSI Circuits, 2009 Symposium on

Date of Conference:

16-18 June 2009