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Evaluation of Surface Recombination Velocity on CdTe Radiation Detectors by Time-of-Flight Measurements

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2 Author(s)
Suzuki, K. ; Hokkaido Inst. of Technol., Sapporo, Japan ; Shiraki, H.

The surface recombination velocity on high-resistivity CdTe with several different crystallographic orientations-(111), 5deg off from (111), 8deg off from (311), and (511)-has been investigated by using a ldquomutau-modelrdquo spectral fitting method in combination with time-of-flight drift mobility measurement. In the samples orientated parallel to (111) and 5deg off from (111), the Cd face exhibits a higher surface recombination velocity ( ~ 6 times 105 cm/s) than the Te face ( ~ 3 times 105 cm/s). Away from the polar face and toward the (511) face, the difference is less pronounced, although not completely absent.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:56 ,  Issue: 4 )