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TID Test of an 8-Gbit NAND Flash Memory

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5 Author(s)
H. Schmidt ; Tech. Univ. Braunschweig, Braunschweig, Germany ; K. Grurmann ; B. Nickson ; F. Gliem
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We report on new results of TID tests on an advanced 8-Gbit NAND-Flash memory. Data error percentage and standby current depend strongly on operational mode. Preventive memory refresh is proposed to move the first error occurrence to significant higher dose values. The count of erase cycles until wear out is not affected by the accumulated dose.

Published in:

IEEE Transactions on Nuclear Science  (Volume:56 ,  Issue: 4 )