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A procedure of SPICE parameters extraction for radiation-induced equivalent lumped parasitic transistor is proposed. Comparison of radiation-induced leakage current in test MOSFETs between total dose irradiation experiments and simulation results exhibits excellent agreement. Mathematical description of combined enhanced low dose-rate sensitivity and tunnel annealing effects as applied to the MOSFET subthreshold leakage has been developed. It has been numerically found that the ELDRS effects are significantly suppressed by the simultaneous tunnel annealing in the edge isolation of MOSFETs.