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Compensation and Photosensitivity in CdTe Doped With Indium

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3 Author(s)
Volodymyr Babentsov ; Dept. for Phys. & Technol. of Low-Dimensional Syst., Nat. Acad. of Sci. of Ukraine, Kiev, Ukraine ; Jan Franc ; Ralph B. James

To better our knowledge of the characteristics of semi-insulated cadmium telluride (CdTe) doped with indium (In), we explored the role of deep levels in compensation and trapping. We assessed the defects and their distribution across a wafer in several ways; by measuring dark resistivity and photosensitivity maps, photoluminescence, Photo-Induced Current Transient Spectroscopy (PICTS), and Thermoelectric Effect Spectroscopy (TEES). We determined that electron trapping to a near midgap level in CdTe:In begins when the Fermi-level lies above this level. We demonstrated first that a small movement (ap 1divide2 kT) of the Fermi-level downward significantly increases electron trapping. PICTS and TEES measurements confirmed the presence of a positively charge electron trap at E C-0.65 eV (plusmn 0.05 eV) with a high capture cross-section. This level transforms into a neutral one when the Fermi-level moves above it. Photoluminescence measurements detected this energy level that, when positively charged, was responsible for a 0.68-eV emission, while in a neutral state, it was accountable for an emission peak located at 0.87 eV. We discuss the nature of the deep donors, considering the latest ldquoab initiordquo calculations: also, the Te anti-site is compared to complex defects, such as H-OCd.

Published in:

IEEE Transactions on Nuclear Science  (Volume:56 ,  Issue: 4 )