By Topic

Evaluation of the Concentration of Deep Levels in Semi-Insulating CdTe by Photoconductivity and TEES

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Jan Kubat ; Fac. of Math. & Phys., Charles Univ., Prague, Czech Republic ; Hassan Elhadidy ; Jan Franc ; Roman Grill
more authors

The concentrations of near-midgap levels in high-resistivity CdTe were estimated based on a combined evaluation of room temperature lux-ampere characteristics and thermoelectric effect spectroscopy measurements (77-400 K). A simulation of experimental data was performed by a numerical solution of drift-diffusion and Poisson equations using a model with two deep levels. A comparison of crystals doped with shallow and deep dopants is given.

Published in:

IEEE Transactions on Nuclear Science  (Volume:56 ,  Issue: 4 )