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Total Ionizing Dose Effects on Ge pMOSFETs With High- k Gate Stack: On/Off Current Ratio

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6 Author(s)
Kulkarni, S.R. ; Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA ; Schrimpf, R.D. ; Galloway, K.F. ; Arora, R.
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The results of total ionizing dose irradiation on p-channel depletion mode MOSFETs fabricated on Ge-on-Si substrates with a TiN/TaN/HfO2 gate stack are reported. There is no significant change observed in gate leakage current, threshold voltage, or transconductance at the maximum total dose of 3 Mrad(SiO2), but there is a reduction in the on/off current ratio of the devices as the total dose increases. This reduction is due to an increase in drain-substrate junction leakage current, which is dominated by an increase in surface generation current.

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Nuclear Science, IEEE Transactions on  (Volume:56 ,  Issue: 4 )