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Annealing conditions used for the preparation of semi-insulating CdTe after elimination of inclusions and precipitates are discussed. Second phase defects are eliminated by post-growth stoichiometric annealing and the semi-insulating CdTe is prepared by re-annealing under Te or Cd overpressure. In case of In-doped samples with high In concentration, semi-insulating CdTe with resistivity approximately 109 Omegacm was prepared by annealing under Te overpressure. In-situ high temperature measurement of the electrical conductivity and Hall coefficient is used to find annealing conditions for undoped and slightly In-doped CdTe. The dominant extrinsic acceptor level with a concentration of NA = 4 times 1015 cm-3 was determined and Cd-rich annealing was used for the preparation of semi-insulating CdTe.