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Effect of Airgap Deep Trench Isolation on the Gamma Radiation Behavior of a 0.13 \mu{\hbox {m}} SiGe:C NPN HBT Technology

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6 Author(s)
Put, S. ; Electr. Eng. Dept., Katholieke Univ. Leuven, Leuven, Belgium ; Simoen, E. ; Van Huylenbroeck, S. ; Claeys, C.
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The effect of an airgap deep trench isolation on the gamma radiation behavior of a 0.13 mum SiGe NPN HBT technology is studied with the help of in-situ measurements. The incorporation of this deep trench isolation in the technology leads to a lower degradation of the transistor during irradiation as well in forward-mode as in reverse-mode operation. A possible explanation is briefly mentioned.

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Nuclear Science, IEEE Transactions on  (Volume:56 ,  Issue: 4 )