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Proton irradiation results are shown here for three different SiGe:C HBT technologies from IHP Microelectronics. High damages are observed although the transistors remain usable for their application on the Super-LHC. Considerations on the ionization and displacement effects additivity are also presented in order to validate parameterized experiments. This study shows a reasonable agreement between proton irradiations and previous gamma and neutron irradiations.