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Proton Radiation Damage on SiGe:C HBTs and Additivity of Ionization and Displacement Effects

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8 Author(s)
Diez, S. ; Inst. de Microelectron. de Barcelona IMB-CNM (CSIC), Barcelona, Spain ; Lozano, M. ; Pellegrini, G. ; Campabadal, F.
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Proton irradiation results are shown here for three different SiGe:C HBT technologies from IHP Microelectronics. High damages are observed although the transistors remain usable for their application on the Super-LHC. Considerations on the ionization and displacement effects additivity are also presented in order to validate parameterized experiments. This study shows a reasonable agreement between proton irradiations and previous gamma and neutron irradiations.

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Nuclear Science, IEEE Transactions on  (Volume:56 ,  Issue: 4 )