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Temperature Dependency of Charge Sharing and MBU Sensitivity in 130-nm CMOS Technology

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5 Author(s)
Biwei Liu ; Sch. of Comput. Sci., Nat. Univ. of Defense Technol., Changsha, China ; Shuming Chen ; Bin Liang ; Zheng Liu
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This paper investigates the temperature dependency of charge sharing in 130-nm CMOS technology over a temperature range of 200 to 420 K. TCAD simulation results show the charge sharing collection increases significantly with temperature rising, which is 65% ~ 317%. The LETth of MBU in two SRAM cells is also quantified. The result reveals that the upset LETth of the passive cell decreases in the whole temperature range, which is different from the parabolic relationship of single-event upset's temperature dependency.

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Nuclear Science, IEEE Transactions on  (Volume:56 ,  Issue: 4 )