Temperature Dependency of Charge Sharing and MBU Sensitivity in 130-nm CMOS Technology

This paper investigates the temperature dependency of charge sharing in 130-nm CMOS technology over a temperature range of 200 to 420 K. TCAD simulation results show the charge sharing collection increases significantly with temperature rising, which is 65% ~ 317%. The LET
_th
of MBU in two SRAM cells is also quantified. The result reveals that the upset LET
_th
of the passive cell decreases in the whole temperature range, which is different from the parabolic relationship of single-event upset's temperature dependency.