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Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters

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8 Author(s)
Martin-Martinez, J. ; Dept. of Electron. Eng., Univ. Autonoma de Barcelona, Barcelona, Spain ; Gerardin, S. ; Amat, E. ; Rodriguez, R.
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The degradation of NMOS and PMOS transistors within CMOS inverters has been analyzed. Channel-hot-carrier (CHC) degradation and/or bias temperature instabilities (BTIs) are identified as aging mechanisms, and their implications at the device and circuit levels are discussed. Device- and circuit-level results have been linked using the BSIM4 SPICE model.

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Electron Devices, IEEE Transactions on  (Volume:56 ,  Issue: 9 )