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Geiger-Mode Operation of GaN Avalanche Photodiodes Grown on GaN Substrates

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10 Author(s)

Ultraviolet (UV) GaN p-i-n avalanche photodiodes (APDs) on low dislocation density free-standing GaN substrates were grown and fabricated. The GaN APD showed a stable avalanche multiplication gain in a linear mode, using UV illumination. In Geiger-mode operation at room temperature with gated quenching, no after-pulsing effect was observed up to 100 kHz. The single-photon detection efficiency and dark-count probability were measured to be ${sim}$1% and ${sim} 3times 10^{- 2}$ at 265 nm, respectively.

Published in:

Photonics Technology Letters, IEEE  (Volume:21 ,  Issue: 20 )

Date of Publication:

Oct.15, 2009

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