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Novel circuit synthesis technique using short channel GaAs FETs giving reduced intermodulation distortion

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3 Author(s)
D. R. Webster ; Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK ; D. G. Haigh ; A. E. Parker

We present graphically a novel FET synthesis technique based on the derivative structure observed in real GaAs MESFETs. The synthesis allows the generation of continuously differentiable linear or nonlinear transfer characteristics

Published in:

Circuits and Systems, 1995. ISCAS '95., 1995 IEEE International Symposium on  (Volume:2 )

Date of Conference:

30 Apr-3 May 1995