Referenced Items are not available for this document.
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3200242
We have studied the magnetic reversal of L-shaped nanostructures fabricated from (Ga,Mn)As. The strain relaxation due to the lithographic patterning results in each arm having a uniaxial magnetic anisotropy. Our analysis confirms that the magnetic reversal takes place via a combination of coherent rotation and domain wall propagation with the domain wall positioned at the corner of the device at intermediate stages of the magnetic hysteresis loops. The domain wall energy can be extracted from our analysis. Such devices have found implementation in studies of current induced domain wall motion and have the potential for application as nonvolatile memory elements.
Published in:
Applied Physics Letters
(Volume:95
,
Issue:
6
)
Date of Publication: Aug 2009
- Page(s):
- 062502 - 062502-3
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.3200242
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 August 2009
- Issue Date :
- Aug 2009
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
