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Electrical transport in laser-crystallized polycrystalline silicon-germanium thin-films

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4 Author(s)
Scheller, L.-P. ; Helmholtz-Zentrum Berlin für Materialien und Energie, Kekuléstr. 5, 12489 Berlin, Germany ; Weizman, M. ; Nickel, N.H. ; Yan, B.

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We report on the electrical transport properties of intentionally undoped, laser-crystallized polycrystalline silicon-germanium thin-films. The electrical transport in this material strongly depends on the alloy composition and the crystallization procedure. At low temperatures the undoped germanium-rich samples show an unexpected high p-type conductivity with a weak temperature dependence. Posthydrogenation results in a pronounced decrease in the conductivity and a change in the dominating low temperature transport behavior. The results are discussed in terms of a grain-boundary dominated transport model.

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Applied Physics Letters  (Volume:95 ,  Issue: 6 )