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Chemical and electronic surface structure of 20%-efficient Cu(In,Ga)Se2 thin film solar cell absorbers

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6 Author(s)
Bar, M. ; Department of Chemistry, University of Nevada, Las Vegas, 4505 Maryland Parkway, P.O. Box 454003, Las Vegas, Nevada 89154-4003, USA ; Repins, I. ; Contreras, M.A. ; Weinhardt, L.
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The chemical and electronic surface structure of 20%-efficient Cu(In,Ga)Se2 thin film solar cell absorbers was investigated as a function of deposition process termination (i.e., ending the growth process in absence of either Ga or In). In addition to the expected In (Ga) enrichment, direct and inverse photoemission reveal a decreased Cu surface content and a larger surface band gap for the “In-terminated” absorber.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 5 )

Date of Publication:

Aug 2009

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