A metallic-CNT-tolerant carbon nanotube technology using Asymmetrically-Correlated CNTs (ACCNT)

We demonstrate carbon nanotube field effect transistors (CNFETs) using Asymmetrically-Correlated Carbon Nanotubes (ACCNT, pronounced “accent”), the first demonstration of a VLSI-compatible metallic-CNT-tolerant design methodology. ACCNT CNFETs take advantage of the asymmetric correlation of CNFETs fabricated on aligned carbon nanotubes to achieve both high I
on
/I
off
(up to 5×;104) and high current drive (∼10+µA). We can increase metallic-CNTtolerance arbitrarily close to 100% (we easily attain 90+% in the results); in comparison, a conventional CNFET design with similar Ion was only at 19%. More than 200 ACCNT test structures and CNFETs were fabricated to demonstrate and validate the ACCNT concepts.