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A metallic-CNT-tolerant carbon nanotube technology using Asymmetrically-Correlated CNTs (ACCNT)

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5 Author(s)
Lin, A. ; Stanford Univ., Stanford, CA, USA ; Patil, N. ; Hai Wei ; Mitra, S.
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We demonstrate carbon nanotube field effect transistors (CNFETs) using asymmetrically-correlated carbon nanotubes (ACCNT, pronounced ldquoaccentrdquo), the first demonstration of a VLSI-compatible metallic-CNT-tolerant design methodology. ACCNT CNFETs take advantage of the asymmetric correlation of CNFETs fabricated on aligned carbon nanotubes to achieve both high Ion/Ioff (up to 5 times 104) and high current drive (~10 + muA). We can increase metallic-CNTtolerance arbitrarily close to 100% (we easily attain 90+% in the results); in comparison, a conventional CNFET design with similar Ion was only at 19%. More than 200 ACCNT test structures and CNFETs were fabricated to demonstrate and validate the ACCNT concepts.

Published in:

VLSI Technology, 2009 Symposium on

Date of Conference:

16-18 June 2009