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Programming characteristics of the steep turn-on/off feedback FET (FBFET)

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4 Author(s)
Yeung, Chun Wing ; Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA ; Padilla, A. ; Tsu-Jae King Liu ; Chenming Hu

The feedback FET is a new steep turn-on/off transistor which achieves six-orders-of-magnitude current change within a 2 mV gate voltage step (0.35 mV/decade). This device requires an initial programming or conditioning step. Its threshold voltage may be adjusted by Fowler-Nordheim or hot-carrier charge injection. Programming and operation of the device is explained with simulation and experimental data.

Published in:

VLSI Technology, 2009 Symposium on

Date of Conference:

16-18 June 2009