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Low voltage (Vdd∼0.6 V) SRAM operation achieved by reduced threshold voltage variability in SOTB (silicon on thin BOX)

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7 Author(s)
Tsuchiya, Ryuta ; Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan ; Sugii, N. ; Ishigaki, T. ; Morita, Y.
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We have successfully demonstrated ldquosilicon on thin BOXrdquo (SOTB) 6T-SRAM with a 50-nm gate. By employing an ultra low-dose channel, this SOTB achieves small Vth variability. As a result, the SOTB SRAM technology has been successfully developed with 0.142 V of static noise margin at Vdd=0.6 V and Vdd_min of 0.63 V because of its excellent Vth variability characteristics. We also show that SOTB CMOS exhibits superior reliability and noise performance. These characteristics indicate robust properties for future industrial high performance and low power LSIs.

Published in:

VLSI Technology, 2009 Symposium on

Date of Conference:

16-18 June 2009