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In this article, we proposed a novel SOI technology for introducing thin BOX SOI structure into bulk Si wafer and demonstrated thin body SOI transistors with the thinnest BOX thickness of 7 nm ever reported. Owing to thin BOX and thin body structure, they showed good VTH controllability and effective ION/IOFF controllability exceeding thick BOX transistors. Their small variation was also confirmed. For further scaling, triple-gate nanowire transistor was also achieved by modifying the field oxide structure. Thus, a novel thin BOX SOI technology using bulk Si wafer must be very useful in controlling the transistor performance/power consumption, as well as in reducing the manufacturing cost.