Sub-10 nm gate-all-around CMOS nanowire transistors on bulk Si substrate

In this paper, sub-10nm gate-all-around (GAA) CMOS silicon nanowire field-effect transistors (SNWFET) on bulk Si substrate are fabricated successfully for the first time with 13-nm-diameter silicon nanowire channel. On-state currents of 1494/1054µA/µm at off leakage currents of 102/6.44nA/µm are obtained for N/PMOS, respectively. The impacts of nanowire diameter (D
NW
) and gate oxide thickness (T
OX
) as well S/D parasitic resistance (R
SD
) on performance are investigated in details.