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Vertical cross-point resistance change memory for ultra-high density non-volatile memory applications

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10 Author(s)
Hong Sik Yoon ; Process Development Team, Memory R&D Center, Semiconductor Business, Samsung Electronics Co. Ltd., San #24, Nongseo-Dong, Giheung-Gu, Yongin-City, Gyunggi-Do 446-711, Korea ; In-Gyu Baek ; Jinshi Zhao ; Hyunjun Sim
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Vertically defined resistance change memory cells for the vertical cross-point architecture (VCPA) as a high density non-volatile memory application are successfully demonstrated with a NiO switching layer. They showed both unipolar and bipolar switching mode. Several issues in realization for VCPA and their possible solutions are discussed.

Published in:

2009 Symposium on VLSI Technology

Date of Conference:

16-18 June 2009