Referenced Items are not available for this document.
Vertically defined resistance change memory cells for the vertical cross-point architecture (VCPA) as a high density non-volatile memory application are successfully demonstrated with a NiO switching layer. They showed both unipolar and bipolar switching mode. Several issues in realization for VCPA and their possible solutions are discussed.
Published in:
VLSI Technology, 2009 Symposium on
Date of Conference: 16-18 June 2009
- Page(s):
- 26 - 27
- Print ISBN:
- 978-1-4244-3308-7
- INSPEC Accession Number:
- 10826225
- Conference Location :
- Honolulu, HI
- Product Type:
- Conference Publications
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