By Topic

SPRAM with large thermal stability for high immunity to read disturbance and long retention for high-temperature operation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
K. Ono ; Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan ; T. Kawahara ; R. Takemura ; K. Miura
more authors

We investigate the effect of temperature on current-induced magnetization switching in SPRAM (spin-transfer torque RAM) consisting of MgO-barrier-based magnetic tunnel junctions (MTJs) with a synthetic ferrimagnetic recording layer (SyF) by comparing the MJTs to those with a single ferromagnetic recording layer. It is found that SPRAM using MTJs with a SyF has two advantages for high-temperature operation: 1) A thermal stability factor E/kBT as high as 64 at 150degC, which would ensure ten-year retention and ten-year immunity to read disturbance; and 2) an increase of the aspect ratio in the SyF, which leads to high coercivity HC, resulting in two stable states (ldquo0rdquo or ldquo1rdquo) at high temperature.

Published in:

2009 Symposium on VLSI Technology

Date of Conference:

16-18 June 2009