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A High-Efficiency GaN-Based Power Amplifier Employing Inverse Class-E Topology

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4 Author(s)
Yong-Sub Lee ; Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea ; Mun-Woo Lee ; Sang-Ho Kam ; Yoon-Ha Jeong

A high efficiency, GaN based power amplifier (PA) employing the inverse class-E topology is reported. The parasitic inductance and large output capacitance of the packaged active device are used as the series inductance and compensated by a shunt inductor, respectively. The composite right/left-handed transmission line is used as a harmonic control network. For the experimental validation, an inverse class-E PA is designed using a GaN HEMT and tested with a continuous wave at 1 GHz. From the measured results, the drain efficiency and power-added efficiency (PAE) of 79.7% and 78.8% with a gain of 19.03 dB is achieved at an output power of 41.03 dBm. Also, the inverse class-E PA can deliver the output power and PAE of over 40.8 dBm and 65% through the bandwidth of 100 MHz.

Published in:

IEEE Microwave and Wireless Components Letters  (Volume:19 ,  Issue: 9 )